1. Capability for growth on wafers as large as 2 inches. 2. Substrate temperature during growth to be as high as 1500 °C with closed loop temperature control ensuring stability +/- 0.5°C. 3. Growth rates of AlN >4µm/hr using TMAl/H2 and Ammonia precursors. 4. Wafer rotation of up to 150 rpm during growth. 5. In-situ monitoring of growth rate for epitaxial films. 6. Control software for automated data collection during recipe execution. 7. Gas delivery system to include: a. UHP 316L SS electropolished piping with VCR fittings b. 3 MO stations: 2 standard (TEGa, CP2Mg) and 1 double dilution TMAl. c. Space for future MO station. d. Purifiers for Ammonia and hydrogen gas delivery lines with bypass manifolds 8. Material demonstration and training at Texas State University. Vendor shall provide AlN substrates, High purity TMAl source, high purity TEGa and 2 SiC coated graphite wafer carriers for demonstration of the growth AlN and GaN. 9. Packing and crating of the system for shipment via air-ride truck and delivered to Texas State university 749 N Comanche St, San Marcos, TX 78666 10. Vendor to provide onsite Training and Material Demonstration. 11. Machine hook up. (TXST to supply exhaust and power to the unit) 12. 1 year warranty minimum.
