This RFP is to provide a tool with the capabilities of depositing low-temperature, plasma enhance chemical vapor deposited silicon dioxide and silicon nitride 5.1 Term of Agreement. Expected delivery of tool in Q1 2026 5.2 Specifications: 5.2.1 The proposed tool can be either 1) a 2-tube, multi-wafer boat furnace system capable of PECVD silicon nitride in one tube and PECVD silicon dioxide in a second tube or 2) a single wafer, parallel plate RF deposition system capable of depositing both silicon dioxide and silicon nitride. 5.2.2 Proposed parallel plate deposition system can be inductively coupled plasma (ICP), high density plasma (HDP) or electron cyclotron resonance (ECR). 5.2.3 The tool should be able to deposit silicon nitride and silicon dioxide over a temperature range of 50C (+/- 25C) to 450C (+/- 25C). Preference will be given to the lower temperature range of substrate temperature. 5.2.4 Tools should have the flexibility to process irregular shaped wafer pieces, 3”, 4” 6” and 8” wafers via the use of wafer shuttles. 5.2.5 Data which shows the tool has the capability to deposit amorphous silicon and/or diamond-like carbon will be viewed favorably in the selection process.
