Specifications include, but are not limited to: Prefer low-cast, small footprint system (tabletop), Xenon Difluoride etching system. 1) Needs to be able to handle small samples and up to 6inch wafers. 2) Both pulsed and continuous flow options required. 3) Capability to be able to mix other gasses with the XeF2 prior to entering the reaction chamber (N2 and H2O vapor for example). a) Consisting of separate paths for H2O purge and for N2 purge 4) Computer/software controlled: a) Password protected, multi-user with recipe storage by user i) Ease of use recipe editing and storage ii) Ease of use of setting, tracking (logging) of machine operating variables. b) Maintenance Software c) Process run logging (parameters, run time etc.) d) Process settings: Pressure, flow, cycle time, cycle number, pause between cycles e) Mixing gas control – Pressure f) Automatic pressure gauge calibration preferred. g) Leak back testing capability h) Characterization capability of XeF2 pressure in chamber – tracking of process pressure during etch runs, logging for future review. i) Process run data needs to be accessible for analysis – copy to memory/network or CD. j) Software guided safety procedures for bottle change/line purge etc. 5) Clear view ports to monitor etching during the process. 6) Safety a) Fume hood interlocked – no venting without hood in place b) Automatic shutoff with loss of vacuum, shut off of XeF2 when chamber pressure is close to atmosphere c) Any additional safety features required to prevent exposure of operators to XeF2 d) Leak check after bottle change capability e) N2 Purge before/after process run and bottle change – prevent release of XeF2 7) Temperature control up to 55°C 8) Dry pump/fume hood included 9) One-year warranty 10) Touch screen interface 11) Additional heating and temperature control for the gas box, and heating for the expansion chamber and process chamber. This increases the sublimation pressure of XeF2 resulting in significantly faster etch rates. It also increases the process stability by decreasing the effect of the ambient temperature on all aspects of the process. 12) Add an MFC and pressure controller to implement a second type of etching which uses a continuous flow of XeF2. This is in addition to the standard pulsed flow etching. The continuous flow process recipe includes the flow rate of XeF2, the pressure of the process chamber and the time to etch. 13) Process Chamber Pressure: 0.5 Torr to 3 Torr on base system. 0.5 Torr to 5 Torr with heating upgrade. XeF2 Flow Rate: 0.2 sccm to 2 sccm on base system. 0.2 sccm to 6 sccm with heating upgrade. 14) High Selectivity. Adds additional gas inputs to facilitate pulsed mode etching with mixing XeF2 with gasses other than nitrogen and to alternate pulses of XeF2 with gases other than nitrogen.
